The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Feb. 01, 1999
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A nitride layer is deposited over a field oxide layer used to separate transistors formed in a substrate, the nitride layer serving to decrease transistor current leakage. The nitride layer has a dense lattice, effectively blocking H+ and Na+ penetration from overlying layers into the field oxide. Positive ions such as H+ and Na+ penetrating into the field oxide layer cause a p-substrate under the field oxide layer to become inverted or act like an n-type substrate, creating leakage current between source and drain regions of transistors which the field oxide layer separates. When high transistor threshold voltages such as 12 volts or more are desired, the nitride layer provides a significant reduction in current leakage.