The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1997
Filed:
Nov. 02, 1995
Applicant:
Inventors:
Jonathan Lin, Milpitas, CA (US);
Radu Barsan, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518517 ; 36518529 ;
Abstract
An improved control gate-addressed CMOS memory cell is provided which allows for programming and erasing by tunneling through the gate oxides of the PMOS and NMOS transistors. The CMOS memory cell (400) includes a PMOS transistor (402), an NMOS transistor (403), and an NMOS pass transistor (405). A capacitor (430) has a first terminal coupled to a common floating gate (416) of the PMOS and NMOS transistors and has a second terminal coupled to a control gate node.
Lin, Jonathan. (1997). Control gate-addressed cmos non-volatile cell that programs through (U.S. Patent No. 5615150). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5615150
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile