Radhika C Mani

Title: Radhika C Mani: Innovator in Atomic Layer Deposition Technologies

Introduction

Radhika C Mani is a prominent inventor based in San Jose, CA (US). She has made significant contributions to the field of atomic layer deposition and etch processes, holding a total of 8 patents. Her work focuses on methods and apparatuses that enhance the quality of surface features in semiconductor manufacturing.

Latest Patents

One of Radhika's latest patents involves atomic layer deposition and etch techniques aimed at reducing surface roughness. The methods described include depositing a conformal layer on a mask using atomic layer deposition (ALD) to minimize roughness. Additionally, the process involves etching a layer beneath the mask to create patterned features with improved surface quality. In various implementations, after etching a substrate to a specific depth, a conformal layer is deposited on the sidewalls of the features to protect them and further reduce roughness during subsequent etching. These processes can be performed in a plasma chamber, showcasing Radhika's innovative approach to semiconductor fabrication.

Career Highlights

Radhika has worked with leading companies in the semiconductor industry, including Lam Research Corporation and Applied Materials, Inc. Her experience in these organizations has allowed her to develop and refine her expertise in atomic layer deposition technologies.

Collaborations

Radhika has collaborated with notable professionals in her field, including Nicolas Gani and Yoshie Kimura. These partnerships have contributed to her success and the advancement of her innovative projects.

Conclusion

Radhika C Mani is a distinguished inventor whose work in atomic layer deposition and etch processes has significantly impacted the semiconductor industry. Her patents and collaborations reflect her commitment to innovation and excellence in technology.