The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Apr. 17, 2007
Radhika Mani, Sunnyvale, CA (US);
Nicolas Gani, San Jose, CA (US);
Wei Liu, San Jose, CA (US);
Meihua Shen, Fremont, CA (US);
Shashank C. Deshmukh, San Jose, CA (US);
Radhika Mani, Sunnyvale, CA (US);
Nicolas Gani, San Jose, CA (US);
Wei Liu, San Jose, CA (US);
Meihua Shen, Fremont, CA (US);
Shashank C. Deshmukh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Wafers having a high K dielectric layer and an oxide or nitride containing layer are etched in an inductively coupled plasma processing chamber by applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl, setting the temperature of the wafer to be between 100° C. and 350° C., and etching the wafer with a selectivity of high K dielectric to oxide or nitride greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a reactive ion etch processing chamber by applying a bias power to the wafer, introducing into the chamber a gas including BCl, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a an inductively coupled plasma processing chamber by applying a bias power to the wafer, applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1.