The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Nov. 30, 2008
Hiroki Sasano, Sunnyvale, CA (US);
Meihua Shen, Fremont, CA (US);
Radhika Mani, San Jose, CA (US);
Sunil Srinivasan, Milpitas, CA (US);
Daehee Weon, Cupertino, CA (US);
Nicolas Gani, San Jose, CA (US);
Shashank Deshmukh, San Ramon, CA (US);
Anisul Khan, Santa Clara, CA (US);
Hiroki Sasano, Sunnyvale, CA (US);
Meihua Shen, Fremont, CA (US);
Radhika Mani, San Jose, CA (US);
Sunil Srinivasan, Milpitas, CA (US);
Daehee Weon, Cupertino, CA (US);
Nicolas Gani, San Jose, CA (US);
Shashank Deshmukh, San Ramon, CA (US);
Anisul Khan, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to define one or more STI structures. The substrate may be etched using a plasma formed from a process gas mixture to form one or more STI structures on the substrate, wherein the process gas mixture comprises a fluorine-containing gas and either a fluorocarbon-containing gas or a hydrofluorocarbon-containing gas.