The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Sep. 13, 2012
Noel Sun, Sunnyvale, CA (US);
Meihua Shen, Fremont, CA (US);
Nicolas Gani, Fremont, CA (US);
Chung Nang Liu, Foster City, CA (US);
Radhika C. Mani, San Jose, CA (US);
Noel Sun, Sunnyvale, CA (US);
Meihua Shen, Fremont, CA (US);
Nicolas Gani, Fremont, CA (US);
Chung Nang Liu, Foster City, CA (US);
Radhika C. Mani, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.