The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jan. 15, 2014
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Radhika C. Mani, San Jose, CA (US);
Nicolas Gani, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/28123 (2013.01); H01L 21/3065 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods of polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch are described. In an example, a method of forming a three-dimensional gate structure includes performing a main plasma etch on a masked polysilicon layer formed over a semiconductor fin. The method also includes, subsequently, performing a plasma over etch on the masked polysilicon layer based on a plasma generated from gaseous composition including hydrogen gas (H).