Fremont, CA, United States of America

Qing Xu

This inventor holds 21 USPTO granted patents and 13 published patent applications, primarily in Plasma Etching Technology. Top assignee: Lam Research Corporation. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qing Xu. Retrieved from https://idiyas.com/inventor/qing-xu-z8k225tm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 95.2

Average Co-Inventor Count = 4.9

ph-index = 3

Forward Citations = 47(Granted Patents)


Company Filing History:


Years Active: 2013-2026

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Areas of Expertise:
Plasma Etching
Ion Control
Semiconductor Processing
Silicon Deposition
Endpoint Detection
Line Edge Roughness
Atomic Layer Etching
Bi-Modal Gas Composition
Inductively Coupled Plasma
Controlled Gas Mixing
Photon-Assisted Process
Through-Silicon Via
21 patents (USPTO):Explore Patents

Title: Innovations in Etching Processes: The Contributions of Qing Xu

Introduction: Qing Xu, based in Fremont, CA, is a distinguished inventor holding 20 patents in the field of advanced etching and deposition techniques. His work is primarily focused on improving manufacturing processes within the semiconductor industry. Throughout his career, he has developed several innovative methods that enhance etching precision and efficiency.

Latest Patents: Among his latest inventions are two notable patents. The first patent, titled "Method for etching features using a targeted deposition for selective passivation," presents a sophisticated approach to patterning stacks with multiple mask features. This method utilizes targeted deposition cycles that include flowing a precursor for layer deposition, followed by a targeted curing process using plasma. This innovative technique allows for precise control over the curing of different portions of the layer, leading to improved etching accuracy.

The second patent, "Methods and systems for advanced ion control for etching processes," describes a novel system for managing bias voltages during substrate treatment. This method involves alternating high and low bias voltage applications to remove exposed target material effectively. By finely tuning the voltage settings, the process maximizes material removal while maintaining the integrity of the mask.

Career Highlights: Qing Xu's career at Lam Research Corporation highlights his contributions to semiconductor manufacturing technologies. His extensive patent portfolio illustrates his commitment to innovation and excellence in the field. Lam Research is known for its cutting-edge technologies, and Qing's work significantly enhances the company's capabilities in etching processes.

Collaborations: Collaborating with talented colleagues, such as Qian Fu and Zhongkui Tan, Qing Xu has strengthened his research and development efforts. These collaborations foster innovation and drive advancements in etching technologies, enhancing the overall effectiveness of their projects.

Conclusion: Qing Xu's inventive spirit and technical expertise have made a lasting impact in the semiconductor industry. His latest patents exemplify his dedication to pushing the boundaries of technology and improving manufacturing processes. As he continues to innovate, Qing Xu remains a key figure in the evolution of semiconductor etching techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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