The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jul. 01, 2020
Lam Research Corporation, Fremont, CA (US);
Wenchi Liu, Milpitas, CA (US);
Zhongkui Tan, Fremont, CA (US);
Juan Valdivia, Fremont, CA (US);
Colin Richard Rementer, Los Angeles, CA (US);
Qing Xu, Fremont, CA (US);
Yoko Yamaguchi, Union City, CA (US);
Yoshie Kimura, Castro Valley, CA (US);
Hua Xiang, Palo Alto, CA (US);
Yasushi Ishikawa, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.