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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10658194 B1

PDFFull Text
Date of Patent:
May. 19, 2020

Filed:

Aug. 23, 2016

Silicon-based deposition for semiconductor processing

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Zhongkui Tan, San Jose, CA (US);

Qing Xu, Fremont, CA (US);

Qian Fu, Pleasanton, CA (US);

Hua Xiang, Pleasanton, CA (US);

Lin Zhao, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Beyer Law Group LLP

Primary Examiner:

Stephanie P Duclair

Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/52 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32 (2013.01); C23C 16/45544 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32009 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/0212 (2013.01); H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 27/1087 (2013.01);
Abstract

A method for processing a substrate in a processing chamber, comprising forming a deposition over the substrate is provided. A silicon containing gas is flowed into the processing chamber. A COS containing gas is flowed into the processing chamber. A plasma is formed from the silicon containing gas and the COS containing gas in the processing chamber, wherein the plasma provides the deposition over the substrate.

Find Patent Forward Citations

Tan, Zhongkui. (2020). Silicon-based deposition for semiconductor processing (U.S. Patent No. 10658194). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10658194

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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