The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Jan. 31, 2017
Lam Research Corporation, Fremont, CA (US);
Zhongkui Tan, San Jose, CA (US);
Yiting Zhang, Fremont, CA (US);
Ying Wu, Dublin, CA (US);
Qing Xu, Fremont, CA (US);
Qian Fu, Pleasanton, CA (US);
Yoko Yamaguchi, Union City, CA (US);
Lin Cui, Dublin, CA (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.