The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Jan. 17, 2017
Lam Research Corporation, Fremont, CA (US);
Zhongkui Tan, San Jose, CA (US);
Yiting Zhang, Fremont, CA (US);
Qian Fu, Pleasanton, CA (US);
Qing Xu, Fremont, CA (US);
Ying Wu, Dublin, CA (US);
Saravanapriyan Sriraman, Fremont, CA (US);
Alex Paterson, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.