Location History:
- Fremont, CA (US) (2019 - 2020)
- Newark, CA (US) (2019 - 2020)
Company Filing History:
Years Active: 2019-2020
Title: Prachi Shrivastava: Innovator in Magnetic Memory Technology
Introduction
Prachi Shrivastava is a prominent inventor based in Newark, CA (US). She has made significant contributions to the field of magnetic memory technology, holding a total of 8 patents. Her innovative work focuses on methods for manufacturing advanced magnetic random access memory (MRAM) elements.
Latest Patents
Among her latest patents is a groundbreaking method for manufacturing reduced pitch magnetic random access memory pillars. This method allows for the formation of self-aligned magnetic memory element pillars arranged in staggered rows at a pitch smaller than what is achievable through photolithography alone. The process involves creating a spacer mask in the form of an array of connected rings, followed by a series of material deposition and removal steps to define the memory element pillars.
Another notable patent is the process for hard mask development for MRAM pillar formation using photolithography. This method fabricates an array of pillars by selecting between electron beam patterning and photolithography patterning on a CMOS wafer. The resulting pillar arrays from both methods are substantially identical, showcasing her expertise in combining different fabrication techniques.
Career Highlights
Prachi currently works at Spin Memory, Inc., where she continues to push the boundaries of magnetic memory technology. Her innovative approaches have positioned her as a key player in the development of next-generation memory solutions.
Collaborations
She collaborates with talented individuals such as Elizabeth Ann Dobisz and Mustafa Pinarbasi, contributing to a dynamic work environment that fosters innovation and creativity.
Conclusion
Prachi Shrivastava's contributions to magnetic memory technology are noteworthy, and her patents reflect her commitment to advancing the field. Her work at Spin Memory, Inc. continues to influence the future of memory technology.