The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Dec. 28, 2017
Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Prachi Shrivastava, Fremont, CA (US);

Mustafa Pinarbasi, Fremont, CA (US);

Thomas Boone, Fremont, CA (US);

Assignee:

Spin Memory, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 21/3065 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 21/3065 (2013.01); H01L 43/12 (2013.01);
Abstract

A method for a photolithographic fabricating process to define pillars having small pitch and pillar size. The method includes coating a hard mask layer of a wafer with a photoresist. The wafer is exposed with a first line pattern comprising a plurality of parallel lines in a first direction. The wafer is then exposed with a second line pattern comprising a plurality of parallel lines in a second direction orthogonal to the first direction. The wafer is then developed to remove areas of the photoresist that were exposed by the first line pattern and the second line pattern resulting in a plurality of pillars.


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