The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Dec. 28, 2017
Spin Memory, Inc., Fremont, CA (US);
Prachi Shrivastava, Fremont, CA (US);
Daniel Liu, Fremont, CA (US);
Yuan Tung Chin, Fremont, CA (US);
Spin Memory, Inc., Fremont, CA (US);
Abstract
A method for fabricating an array of pillars. The method includes fabricating an MTJ (magnetic tunnel junction) film deposition metal stack on a CMOS wafer. The method selects between subsequent electron beam patterning for the wafer and photolithography patterning for the wafer. For electron beam patterning, an electron beam lithography hard mask is deposited onto the metal stack, and an electron beam is used to pattern a first array of pillars into the electron beam lithography hard mask to produce a first resulting pillar array. For photolithography patterning, a photolithography hard mask is deposited onto the metal stack, and photolithography is used to pattern a second array of pillars into the photolithography hard mask to produce a second resulting pillar array. The first resulting pillar array is substantially the same as the second resulting pillar array.