The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Dec. 30, 2017
Applicant:

Spin Transfer Technologies, Inc., Fremont, CA (US);

Inventors:

Elizabeth A. Dobisz, San Jose, CA (US);

Prachi Shrivastava, Newark, CA (US);

Assignee:

SPIN MEMORY, INC., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01);
Abstract

A method for manufacturing a magnetic random access memory array at a density greater than would be possible using photolithography. A template is formed having a pattern that is configured to define a memory array. A block copolymer material is deposited onto the template and annealed to form narrow cylinders of ordered block copolymer material. A metal oxide is then diffused into the cylinders to form narrow metal oxide cylinders. The metal oxide cylinders can then be used as mask structures to pattern a hard mask layer. An ion milling process can then be performed to transfer the image of the patterned hard mask onto an underlying magnetic memory material to form an array having features sizes smaller than what would be possible using photolithography.


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