Hsinchu, Taiwan

Po-Yuan Wang

This inventor holds 10 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2022-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Yuan Wang. Retrieved from https://idiyas.com/inventor/po-yuan-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 100.0

Average Co-Inventor Count = 6.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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10 patents (USPTO):Explore Patents

Title: The Innovative Journey of Po-Yuan Wang

Introduction: Po-Yuan Wang is a distinguished inventor hailing from Hsinchu, Taiwan. His groundbreaking work in the field of technology has earned him recognition on a global scale.

Latest Patents: Po-Yuan Wang's most recent patents focus on advancements in semiconductor technology, particularly in the realm of nanotechnology and microelectronics. These patents showcase his commitment to pushing the boundaries of innovation.

Career Highlights: With a career spanning over two decades, Po-Yuan Wang has held key positions in leading tech companies, where he has spearheaded research and development projects that have led to significant technological breakthroughs. His expertise in semiconductor design and manufacturing has been instrumental in shaping the industry.

Collaborations: Po-Yuan Wang has collaborated with top research institutions and universities worldwide to further his research and bring his innovative ideas to life. His collaborative efforts have resulted in the development of cutting-edge technologies that have revolutionized the semiconductor industry.

Conclusion: Po-Yuan Wang's passion for innovation and his relentless pursuit of technological advancement have solidified his reputation as a visionary inventor. His contributions to the field of technology continue to inspire future generations of inventors and researchers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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