The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Mar. 07, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu Ang Chiang, I-lan, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Chun-Neng Lin, Hsinchu, TW;
Jian-Jou Lian, Tainan, TW;
Po-Yuan Wang, Hsinchu, TW;
Chieh-Wei Chen, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.