The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Jul. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Jian-Jou Lian, Tainan, TW;

Tzu Ang Chiang, I-Ian, TW;

Ming-Hsi Yeh, Hsinchu, TW;

Chun-Neng Lin, Hsinchu, TW;

Po-Yuan Wang, Hsinchu, TW;

Chieh-Wei Chen, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes second spacers over the semiconductor fin. The second spacers vertically extend farther from the semiconductor fin than the first spacers. The semiconductor device includes a metal gate over the semiconductor fin, the metal gate is sandwiched by the first spacers. The metal gate includes a glue layer that contains tantalum nitride.


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