The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Oct. 14, 2020
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Jian-Jou Lian, Tainan, TW;
Tzu Ang Chiang, I-lan, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Chun-Neng Lin, Hsinchu, TW;
Po-Yuan Wang, Hsinchu, TW;
Chieh-Wei Chen, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes forming a gate trench over a semiconductor fin, the gate trench including an upper portion and a lower portion. The method includes sequentially forming one or more work function layers, a capping layer, and a glue layer over the gate trench. The glue layer includes a first sub-layer and a second sub-layer that have respective different etching rates with respect to an etching solution. The method includes removing the second sub-layer while leaving a first portion of the first sub-layer filled in the lower portion of the gate trench.