Company Filing History:
Years Active: 1992-1995
Title: The Innovations of Philip E. Freiberger
Introduction
Philip E. Freiberger is a notable inventor based in Santa Clara, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
Freiberger's latest patents include innovative methods for improving intermetal dielectrics. One of his patents, titled "High density TEOS-based film for intermetal dielectrics," discloses a method of forming a device that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric. This method achieves higher density through increased RF power and oxygen flow rate, resulting in a dielectric that absorbs water from the air more slowly than standard films. This reduction in water absorbance minimizes the amount of moisture in the device, thereby decreasing hot electron-induced degradation.
Another significant patent is "TEOS intermetal dielectric preclean for VIA formation." This patent outlines a method for precleaning a TEOS oxide layer in semiconductor devices to enhance photoresist adhesion. The process involves exposing the TEOS oxide layer to a solution containing NH4F, buffered HF, and ethylene glycol.
Career Highlights
Freiberger is currently employed at Intel Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.
Collaborations
Throughout his career, Freiberger has collaborated with esteemed colleagues, including Ragupathy V. Giridhar and Leopoldo D. Yau. These collaborations have further enriched his contributions to the field.
Conclusion
Philip E. Freiberger's work exemplifies the spirit of innovation in semiconductor technology. His patents reflect a commitment to enhancing device performance and reliability, making a lasting impact in the industry.