The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1993
Filed:
Jun. 07, 1991
Applicant:
Inventor:
Philip E Freiberger, Santa Clara, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B23P / ; B44C / ;
U.S. Cl.
CPC ...
437195 ; 437946 ; 437981 ; 437238 ; 156644 ; 156646 ; 156650 ; 156653 ;
Abstract
A method of precleaning a TEOS oxide layer of a semiconductor device formed by a dep-etch process in order to promote photoresist adhesion to the TEOS oxide layer. The method comprises exposing the TEOS oxide layer to a solution comprising: NH.sub.4 F, buffered HF, and ethylene glycol.
Freiberger, Philip. (1993). Teos intermetal dielectric preclean for via formation (U.S. Patent No. 5219791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5219791
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile