The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1995
Filed:
May. 25, 1993
Applicant:
Inventors:
Philip Freiberger, Santa Clara, CA (US);
Ragupathy V Giridhar, San Jose, CA (US);
Brett Huff, Fremont, CA (US);
Farhad K Moghadam, Los Gatos, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437238 ; 437195 ; 437240 ;
Abstract
A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.