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For the Inventor, By the Inventor

Boise, ID, United States of America

Pary Baluswamy

This inventor holds 17 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2002-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pary Baluswamy. Retrieved from https://idiyas.com/inventor/pary-baluswamy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17

% Patents Active = 47.1

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 59(Granted Patents)


Location History:

  • Boise, ID (US) (2002 - 2011)
  • Bristow, VA (US) (2010 - 2012)

Company Filing History:

goldMedal17 out of 39,176 
 
Micron Technology Incorporated
 patents

Years Active: 2002-2012

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17 patents (USPTO):Explore Patents
1. 8323859 - Optical compensation devices, systems, and methods (2012-12-04),
2. 8062814 - Optical compensation devices, systems, and methods (2011-11-22),
3. 7862964 - Methods for photo-processing photo-imageable material (2011-01-04),
4. 7790338 - Optical compensation devices, systems, and methods (2010-09-07),
5. 7767363 - Methods for photo-processing photo-imageable material (2010-08-03),
6. 7655384 - Methods for reducing spherical aberration effects in photolithography (2010-02-02),
7. 7268869 - In-situ spectrograph and method of measuring light wavelength characteristics for photolithography (2007-09-11),
8. 7223674 - Methods for forming backside alignment markers useable in semiconductor lithography (2007-05-29),
9. 7105278 - Pattern mask with features to minimize the effect of aberrations (2006-09-12),
10. 6914017 - Residue free overlay target (2005-07-05),
11. 6822342 - Raised-lines overlay semiconductor targets and method of making the same (2004-11-23),
12. 6803157 - Pattern mask with features to minimize the effect of aberrations (2004-10-12),
13. 6756167 - Overlay target design method to minimize impact of lens aberrations (2004-06-29),
14. 6675053 - Layout for measurement of overlay error (2004-01-06),
15. 6514643 - Overlay target exposure device utilizing pitch determination to minimize impact of lens aberrations (2003-02-04),

Title: Pary Baluswamy: Innovator in Optical Compensation Technologies

Introduction

Pary Baluswamy is a prominent inventor based in Boise, ID (US), known for her significant contributions to the field of optical compensation devices. With a total of 17 patents to her name, she has made remarkable advancements in photolithographic technologies.

Latest Patents

Her latest patents focus on optical compensation devices, systems, and methods. These innovations include photolithographic apparatus that utilize optical compensation devices. In various embodiments, an imaging mask is designed with an optically transmissive substrate. A first patterned region is formed on this substrate, alongside a second patterned region that is proximate to the first. Each of these regions contains a combination of optically transmissive and optically attenuating areas. An optical compensation region is strategically positioned near at least one of these patterned regions, enabling it to alter the phase of the illumination radiation that interacts with the substrate.

Career Highlights

Pary Baluswamy is currently employed at Micron Technology Incorporated, where she continues to push the boundaries of innovation in her field. Her work has been instrumental in enhancing the capabilities of photolithographic systems, which are crucial for various applications in semiconductor manufacturing.

Collaborations

Throughout her career, Pary has collaborated with notable colleagues, including Tim H Bossart and Richard D Holscher. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Pary Baluswamy's contributions to optical compensation technologies exemplify her dedication to innovation and excellence. Her work not only advances the field but also inspires future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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