The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Aug. 30, 2000
Pary Baluswamy, Boise, ID (US);
Scott J. Deboer, Boise, ID (US);
Ceredig Roberts, Boise, ID (US);
Tim H. Bossart, Boise, ID (US);
Pary Baluswamy, Boise, ID (US);
Scott J. DeBoer, Boise, ID (US);
Ceredig Roberts, Boise, ID (US);
Tim H. Bossart, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The present invention includes a residue-free overlay target, as well as a method of forming a residue-residue free overlay target. The residue-free overlay target of the present invention is defined by trenches or pads including a series of raised lines. The raised lines included in the overlay target of the present invention substantially eliminate any surface topography, such as depressions, at the top surface of overlying material layers, and, thereby, prevent accumulation of process residue which may obscure the overlay target and inhibit further processing. The method of the present invention may be accomplished and modified using process technology known in the semiconductor fabrication art and includes providing a semiconductor substrate, depositing a resist layer, patterning the resist, and executing a wet or dry etch to create at least one overlay target according to the present invention.