The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Sep. 05, 2006
Applicant:
Pary Baluswamy, Boise, ID (US);
Inventor:
Pary Baluswamy, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods to at least partially compensate for photoresist-induced spherical aberration that occurs during mask imaging used for photolithographic processing of semiconductor devices, LCD elements, thin-film magnetic heads, reticles and other substrates including photo-defined structures thereon are disclosed. A photoresist or other photosensitive material may be irradiated with a mask pattern image including a selected nonzero spherical aberration value to compensate for photoresist-induced spherical aberration.