Beacon, NY, United States of America

Padraic C Shafer


Average Co-Inventor Count = 6.7

ph-index = 6

Forward Citations = 123(Granted Patents)


Location History:

  • Beacon, NY (US) (2003 - 2005)
  • Fishkill, NY (US) (2005)

Company Filing History:


Years Active: 2003-2005

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7 patents (USPTO):Explore Patents

Title: The Innovations of Padraic C Shafer

Introduction

Padraic C Shafer is a notable inventor based in Beacon, NY (US), recognized for his contributions to the field of microelectronics. With a total of 7 patents to his name, Shafer has made significant advancements in semiconductor technology.

Latest Patents

Among his latest patents, one focuses on reducing metal shorts in blanket metal deposition layers during the fabrication of microelectronic devices. This method, titled "Low Cu percentages for reducing shorts in AlCu lines," presents an innovative approach to improving the reliability of metallization structures. Another significant patent is the "Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectric." This method allows for the concurrent formation of a high-K node dielectric and trench sidewall dielectric, enhancing the efficiency of semiconductor devices.

Career Highlights

Shafer has had a distinguished career, working with prominent companies such as IBM. His work has contributed to the advancement of technologies that are crucial for modern electronic devices.

Collaborations

Throughout his career, Shafer has collaborated with esteemed colleagues, including Rajarao Jammy and Richard Anthony Conti. These collaborations have further enriched his innovative contributions to the field.

Conclusion

Padraic C Shafer's work exemplifies the spirit of innovation in microelectronics. His patents and collaborations reflect a commitment to advancing technology and improving device performance.

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