The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
May. 01, 2002
Michael Patrick Chudzik, Beacon, NY (US);
Jack Allan Mandelman, Stormville, NY (US);
Carl John Radens, LaGrangeville, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Kenneth T. Settlemyer, Jr., Poughquag, NY (US);
Padraic C. Shafer, Beacon, NY (US);
Joseph F. Shepard, Jr., Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention is a method and structure for fabricating a trench capacitor within a semiconductor substrate having a buried plate electrode formed of metal silicide. A collar is formed in a trench etched into a substrate; a conformal metal film is deposited thereover, and is annealed to form a silicide that is self-aligned to the collar. Silicide will not be formed on the collar, pads and other areas where the silicon is not directly exposed and hence the metal layer can be removed from these areas by selective etching.