The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Jun. 03, 2003
Michael P. Belyansky, Bethel, CT (US);
Rama Divakaruni, Ossining, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Rajarao Jammy, Hopewell Junction, NY (US);
Kenneth T. Settlemeyer, Jr., Poughquag, NY (US);
Padraic C. Shafer, Fishkill, NY (US);
Michael P. Belyansky, Bethel, CT (US);
Rama Divakaruni, Ossining, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Rajarao Jammy, Hopewell Junction, NY (US);
Kenneth T. Settlemeyer, Jr., Poughquag, NY (US);
Padraic C. Shafer, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Isolation trenches and capacitor trenches containing vertical FETs (or any prior levels p-n junctions or dissimilar material interfaces) having an aspect ratio up to 60 are filled with a process comprising: applying a spin-on material based on silazane and having a low molecular weight; pre-baking the applied material in an oxygen ambient at a temperature below about 450 deg C.; converting the stress in the material by heating at an intermediate temperature between 450 deg C. and 800 deg C. in an H2O ambient; and heating again at an elevated temperature in an O2 ambient, resulting in a material that is stable up to 1000 deg C., has a compressive stress that may be tuned by variation of the process parameters, has an etch rate comparable to oxide dielectric formed by HDP techniques, and is durable enough to withstand CMP polishing.