The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Jul. 31, 2002
Roy C. Iggulden, Newburgh, NY (US);
Padraic Shafer, Fishkill, NY (US);
Kwong Hon (Keith) Wong, Wappingers Falls, NY (US);
Michael M. Iwatake, Wappingers Falls, NY (US);
Jay W. Strane, Chester, NY (US);
Thomas Goebel, Munich, DE;
Donna D. Miura, Hopewell Junction, NY (US);
Chet Dziobkowski, Hopewell Junction, NY (US);
Werner Robl, Poughkeepsie, NY (US);
Brian Hughes, San Jose, CA (US);
Roy C. Iggulden, Newburgh, NY (US);
Padraic Shafer, Fishkill, NY (US);
Kwong Hon (Keith) Wong, Wappingers Falls, NY (US);
Michael M. Iwatake, Wappingers Falls, NY (US);
Jay W. Strane, Chester, NY (US);
Thomas Goebel, Munich, DE;
Donna D. Miura, Hopewell Junction, NY (US);
Chet Dziobkowski, Hopewell Junction, NY (US);
Werner Robl, Poughkeepsie, NY (US);
Brian Hughes, San Jose, CA (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: