For the Inventor, By the Inventor

Enter inventor name

Grenoble, France

Olivier Rayssac

USPTO Granted Patents = 48 (Patent Applications = 1)

EPO Patents = 12 (Patent Applications = 1)

Average Co-Inventor Count = 3.0

ph-index = 11

Forward Citations = 389(Granted Patents)

Company Filing History:

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Commissariat a L'energie Atomique

Commissariat À L'energie Atomique (cea)

5. 4 out of 507

where one patent can have more than one assignee

Years Active: 2001-2018

Loading Chart...

Loading Chart...

Areas of Expertise:

Monocrystalline Semiconductor

Substrate Cutting Device

Layer Transfer Method

Detachable Substrate

Semiconductor Structure

Surface Treatment

Embrittled Substrate

Atomic Implantation

Semiconductor Assembly

Preventive Treatment

Multilayer Structure

Bonding Semiconductor Structures

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10002763 - Fabrication of substrates with a useful layer of monocrystalline semiconductor material (2018-06-19),

2. 8991673 - Substrate cutting device and method (2015-03-31),

3. 8507361 - Fabrication of substrates with a useful layer of monocrystalline semiconductor material (2013-08-13),

4. 8252664 - Fabrication of substrates with a useful layer of monocrystalline semiconductor material (2012-08-28),

5. 8093687 - Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transfer (2012-01-10),

6. 8083115 - Substrate cutting device and method (2011-12-27),

7. 8012289 - Method of fabricating a release substrate (2011-09-06),

8. 7972939 - Transfer method with a treatment of a surface to be bonded (2011-07-05),

9. 7939428 - Methods for making substrates and substrates formed therefrom (2011-05-10),

10. 7902038 - Detachable substrate with controlled mechanical strength and method of producing same (2011-03-08),

11. 7892946 - Device and method for cutting an assembly (2011-02-22),

12. 7888235 - Fabrication of substrates with a useful layer of monocrystalline semiconductor material (2011-02-15),

13. 7839001 - Methods for making substrates and substrates formed therefrom (2010-11-23),

14. 7713369 - Detachable substrate or detachable structure and method for the production thereof (2010-05-11),

15. 7670929 - Method for direct bonding two semiconductor substrates (2010-03-02),

Title: Inventor Olivier Rayssac - Revolutionizing Technology in Grenoble, FR

Introduction: Olivier Rayssac is a visionary inventor based in Grenoble, France, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Olivier Rayssac holds several patents in the areas of renewable energy, sustainable materials, and advanced electronics, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Olivier Rayssac has worked with leading research institutions and technology companies to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Olivier Rayssac has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Olivier Rayssac's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs in Grenoble and beyond.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…