The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Oct. 28, 2010
Alice Boussagol, Brignoud, FR;
Bruce Faure, Grenoble, FR;
Bruno Ghyselen, Seyssinet, FR;
Fabrice Letertre, Meylan, FR;
Olivier Rayssac, Grenoble, FR;
Pierre Rayssac, Legal Representative, Grenoble, FR;
Gisèle Rayssac, Legal Representative, Grenoble, FR;
Alice Boussagol, Brignoud, FR;
Bruce Faure, Grenoble, FR;
Bruno Ghyselen, Seyssinet, FR;
Fabrice Letertre, Meylan, FR;
Olivier Rayssac, Grenoble, FR;
Pierre Rayssac, legal representative, Grenoble, FR;
Gisèle Rayssac, legal representative, Grenoble, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.