The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Sep. 27, 2011
Fabrice Letertre, Meylan, FR;
Bruno Ghyselen, Seyssinet, FR;
Olivier Rayssac, Grenoble, FR;
Pierre Rayssac, Legal Representative, Grenoble, FR;
Gisèle Rayssac, Legal Representative, Grenoble, FR;
Fabrice Letertre, Meylan, FR;
Bruno Ghyselen, Seyssinet, FR;
Olivier Rayssac, Grenoble, FR;
Pierre Rayssac, legal representative, Grenoble, FR;
Gisèle Rayssac, legal representative, Grenoble, FR;
Soitec, Bernin, FR;
Abstract
The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.