Yokohama, Japan

Noritaka Nakayama

This inventor holds 9 USPTO granted patents and 3 EPO patents. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.. Active years: 2002-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noritaka Nakayama. Retrieved from https://idiyas.com/inventor/noritaka-nakayama-txrioddy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0


Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 45(Granted Patents)


Location History:

  • Kawasaki, JP (2002 - 2004)
  • Kanagawa-ken, JP (2013)
  • Yokohama, JP (2012 - 2019)

Company Filing History:


Years Active: 2002-2019

Loading Chart...
Loading Chart...
9 patents (USPTO):Explore Patents

Title: Noritaka Nakayama: Innovator in Silicon Nitride Technology

Introduction

Noritaka Nakayama is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of materials science, particularly in the development of silicon nitride substrates and circuit boards. With a total of nine patents to his name, Nakayama's work has advanced the understanding and application of silicon nitride in various technologies.

Latest Patents

One of Nakayama's latest patents focuses on a silicon nitride substrate that includes silicon nitride crystal grains and a grain boundary phase. This substrate boasts a thermal conductivity of 50 W/m·K or more. The patent specifies a sectional structure where the ratio (T2/T1) of the total length T2 of the grain boundary phase in the thickness direction to the thickness T1 of the silicon nitride substrate is between 0.01 and 0.30. Additionally, the variation from a dielectric strength mean value, when measured by a four-terminal method, is 20% or less. The dielectric strength mean value of this silicon nitride substrate can reach 15 kV/mm or more. This innovative structure aims to reduce variation in dielectric strength, enhancing the reliability of silicon nitride substrates and the circuit boards that utilize them.

Career Highlights

Noritaka Nakayama has worked with notable companies such as Kabushiki Kaisha Toshiba and Toshiba Materials Co., Ltd. His experience in these organizations has allowed him to collaborate on various projects that push the boundaries of material science and engineering.

Collaborations

Some of Nakayama's coworkers include Takayuki Naba and Hiromasa Kato. Their collaborative efforts have contributed to the advancements in silicon nitride technology and its applications.

Conclusion

Noritaka Nakayama's innovative work in silicon nitride substrates and circuit boards has made a significant impact in the field of materials science. His patents reflect a commitment to enhancing the performance and reliability of electronic components. Nakayama's contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…