The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Sep. 26, 2011
Applicants:
Hiroshi Komorita, Yokohama, JP;
Noritaka Nakayama, Yokohama, JP;
Kentaro Takanami, Yokohama, JP;
Inventors:
Assignees:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA MATERIALS CO., LTD., Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/20 (2006.01); C04B 35/581 (2006.01); C04B 41/00 (2006.01); C04B 41/50 (2006.01); C04B 41/87 (2006.01); C23C 16/30 (2006.01); C04B 111/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C04B 35/581 (2013.01); C04B 41/009 (2013.01); C04B 41/5062 (2013.01); C04B 41/87 (2013.01); C23C 16/303 (2013.01); H01L 21/02107 (2013.01); C04B 2111/0025 (2013.01); C04B 2111/00844 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/3895 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01); C04B 2235/945 (2013.01); C04B 2235/963 (2013.01); C04B 2235/9607 (2013.01); C04B 2235/9638 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02428 (2013.01);
Abstract
There is provided a polycrystalline aluminum nitride substrate that is effective in growing a GaN crystal. The polycrystalline aluminum nitride base material for use as a substrate material for grain growth of GAN-base semiconductors, contains 1 to 10% by weight of a sintering aid component and has a thermal conductivity of not less than 150 W/m·K, the substrate having a surface free from recesses having a maximum diameter of more than 200 μm.