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For the Inventor, By the Inventor

Kanagawa, Japan

Noritaka Ishihara

USPTO Granted Patents = 46 


Average Co-Inventor Count = 5.9

ph-index = 9

Forward Citations = 349(Granted Patents)


Location History:

  • Kawasaki, JP (2014 - 2017)
  • Koza, JP (2016 - 2024)
  • Kanagawa, JP (2016 - 2024)

Company Filing History:

goldMedal46 out of 16,627 
 
Semiconductor Energy Laboratory Co., Ltd.
 patents

Years Active: 2014-2025

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Areas of Expertise:
Semiconductor Device
Metal Oxide Film
Sputtering Target
Transistor
Oxide Semiconductor
Multilayer Film
Insulator
Display Device
Electronic Appliance
Measurement Device
Electronic Device
Manufacturing Method
46 patents (USPTO):Explore Patents
1. 12349460 - Manufacturing method of semiconductor device (2025-07-01),
2. 12302639 - Metal oxide film and method for forming metal oxide film (2025-05-13),
3. 12154827 - Semiconductor device having plurality of insulators (2024-11-26),
4. 11978742 - Metal oxide film and method for forming metal oxide film (2024-05-07),
5. 11967505 - Method for manufacturing sputtering target, method for forming oxide film, and transistor (2024-04-23),
6. 11804407 - Semiconductor device having plurality of insulators (2023-10-31),
7. 11742431 - Semiconductor device and method for manufacturing semiconductor device (2023-08-29),
8. 11652110 - Metal oxide film and method for forming metal oxide film (2023-05-16),
9. 11637015 - Method for manufacturing sputtering target, method for forming oxide film, and transistor (2023-04-25),
10. 11239237 - Semiconductor device (2022-02-01),
11. 11211467 - Semiconductor device and method for manufacturing semiconductor device (2021-12-28),
12. 11195758 - Semiconductor device and method for manufacturing semiconductor device having plurality of insulator (2021-12-07),
13. 11152513 - Semiconductor device and method for manufacturing semiconductor device (2021-10-19),
14. 11139166 - Method for manufacturing sputtering target, method for forming oxide film, and transistor (2021-10-05),
15. 10892282 - Metal oxide film and method for forming metal oxide film (2021-01-12),

Title: Noritaka Ishihara: Pioneering Inventor from Kanagawa

Introduction: Noritaka Ishihara is a renowned inventor hailing from Kanagawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ishihara holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Ishihara has worked with leading tech companies in Japan, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Ishihara has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Noritaka Ishihara's dedication to pushing the boundaries of technology and his passion for creating solutions to complex problems make him a true visionary in the world of inventions.

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