Semiconductor Energy Laboratory Co., Ltd.

Noritaka Ishihara

Masashi Oota

Shunpei Yamazaki

Masashi Tsubuku

Yusuke Nonaka

Masahiro Takahashi

Takuya Hirohashi

Yoichi Kurosawa

Junichi Koezuka

Daisuke Matsubayashi

Kenichi Okazaki

Yasuharu Hosaka

Takahisa Ishiyama

Hideyuki Kishida

Yasumasa Yamane

Toshimitsu Obonai

Ryosuke Watanabe

Tsutomu Murakawa

Hiromi Sawai

Akihisa Shimomura

Masami Jintyou

Yukinori Shima

Toshihiko Takeuchi

Motoki Nakashima

Yuhei Sato

Yuji Egi

Hiroki Komagata

Koki Inoue

Chiho Kawanabe

Masahiko Hayakawa

Motomu Kurata

Kazutaka Kuriki

Yoshinobu Asami

Shinpei Matsuda

Ryo Tokumaru

Haruyuki Baba

Satoru Saito

Akio Suzuki

Tomoki Hiramatsu

Yuta Endo

Mitsuhiro Ichijo

Daisuke Kurosaki

Takashi Hamada

Katsuaki Tochibayashi

Ryota Hodo

Ryunosuke Honda

Hiroshi Kanemura

Shota Sambonsuge

Yoshinori Yamada

Kazuya Sugimoto

Tomoyo Kamogawa

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

Manufacturing method of semiconductor device

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

Metal oxide film and method for forming metal oxide film

A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Semiconductor device having plurality of insulators

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Method for manufacturing sputtering target, method for forming oxide film, and transistor

A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

Semiconductor device and method for manufacturing semiconductor device

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm&#x3c6; and less than or equal to 10 nm&#x3c6;.

A semiconductor device having high operation frequency is provided. The semiconductor device includes a transistor including a first conductive layer, a first insulating layer, a second insulating layer, a first oxide, a second oxide, a third oxide, a third insulating layer, and a second conductive layer that are stacked in this order, and a fourth insulating layer. The first conductive layer and the second conductive layer include a region overlapping with the second oxide. In a channel width direction of the transistor, a level of the bottom surface of the second oxide is from more than or equal to &#x2212;5 nm to less than 0 nm when a level of a region of the bottom surface of the second conductive layer which does not overlap with the second oxide is regarded as a reference.

Semiconductor device

A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

Semiconductor device and method for manufacturing semiconductor device having plurality of insulator

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Kanagawa, Japan

Noritaka Ishihara