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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12302639 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Mar. 26, 2024

Metal oxide film and method for forming metal oxide film

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Masahiro Takahashi, Kanagawa, JP;

Takuya Hirohashi, Kanagawa, JP;

Masashi Tsubuku, Kanagawa, JP;

Noritaka Ishihara, Kanagawa, JP;

Masashi Oota, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 27/12 (2006.01); C23C 14/08 (2006.01); G01N 23/207 (2018.01); G02F 1/1368 (2006.01); H01L 21/66 (2006.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); C23C 14/086 (2013.01); G01N 23/207 (2013.01); G02F 1/1368 (2013.01); H01L 22/12 (2013.01); H10D 30/6755 (2025.01); H10D 30/6756 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 86/423 (2025.01); H10D 99/00 (2025.01); H01L 21/0237 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

Find Patent Forward Citations

Takahashi, Masahiro. (2025). Metal oxide film and method for forming metal oxide film (U.S. Patent No. 12302639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12302639

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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