The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jan. 08, 2021
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Masahiro Takahashi, Kanagawa, JP;
Takuya Hirohashi, Kanagawa, JP;
Masashi Tsubuku, Kanagawa, JP;
Noritaka Ishihara, Kanagawa, JP;
Masashi Oota, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 21/66 (2006.01); H01L 29/24 (2006.01); G02F 1/1368 (2006.01); G01N 23/207 (2018.01); H01L 29/66 (2006.01); C23C 14/08 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); C23C 14/086 (2013.01); G01N 23/207 (2013.01); G02F 1/1368 (2013.01); H01L 22/12 (2013.01); H01L 29/04 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01); H01L 21/0237 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.