The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Jan. 15, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Yusuke Nonaka, Atsugi, JP;
Noritaka Ishihara, Koza, JP;
Tomoki Hiramatsu, Koto, JP;
Ryunosuke Honda, Isehara, JP;
Tomoyo Kamogawa, Kako, JP;
Ryota Hodo, Atsugi, JP;
Katsuaki Tochibayashi, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor device having high operation frequency is provided. The semiconductor device includes a transistor including a first conductive layer, a first insulating layer, a second insulating layer, a first oxide, a second oxide, a third oxide, a third insulating layer, and a second conductive layer that are stacked in this order, and a fourth insulating layer. The first conductive layer and the second conductive layer include a region overlapping with the second oxide. In a channel width direction of the transistor, a level of the bottom surface of the second oxide is from more than or equal to −5 nm to less than 0 nm when a level of a region of the bottom surface of the second conductive layer which does not overlap with the second oxide is regarded as a reference.