Yokohama, Japan

Norio Endo


Average Co-Inventor Count = 2.2

ph-index = 6

Forward Citations = 93(Granted Patents)


Location History:

  • Yokohama, JA (1977)
  • Yokohama, JP (1981 - 1984)

Company Filing History:


Years Active: 1977-1984

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6 patents (USPTO):Explore Patents

Title: Norio Endo: Innovator in Semiconductor Technology

Introduction

Norio Endo is a prominent inventor known for his contributions to semiconductor technology. He is based in Yokohama, Japan, and has been awarded a total of six patents throughout his career. His work has significantly impacted the field of nonvolatile memory devices and photomask evaluation methods.

Latest Patents

One of Norio Endo's latest patents is for a nonvolatile semiconductor memory device and method of fabricating it. This invention features a gate insulating film with a memory function, which includes an impurity layer in the substrate region. The impurity layer is designed to enhance the performance of the memory device by optimizing the impurity concentration profile. Another notable patent involves a method for evaluating the measure precision of patterns and a photomask for this purpose. This method includes a mask pattern that corresponds to a desired substrate pattern and features a measure precision evaluating pattern to assess dimensional changes in the transcribed patterns.

Career Highlights

Norio Endo has worked with notable companies such as Tokyo Shibaura Denki Kabushiki Kaisha and Nippon Hoso' Kyokai. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Norio Endo has collaborated with esteemed colleagues, including Yoshio Nishi and Soichi Iwamura. These partnerships have contributed to the advancement of technology in their respective fields.

Conclusion

Norio Endo's work in semiconductor technology and his innovative patents have made a significant impact on the industry. His contributions continue to influence the development of advanced memory devices and evaluation methods.

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