The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1984
Filed:
Jun. 23, 1982
Abstract
A method for evaluating the measure precision of patterns such as photoresist and etched ones, and a photomask therefor. The photomask according to the present invention has a mask pattern corresponding to a pattern desired to be formed in a substrate, and also has a measure precision evaluating pattern formed at an area different from where the mask pattern is present. The measure precision evaluating pattern comprises a first measure precision evaluating pattern which has a plurality of pairs of pattern elements opposite to each other with a predetermined distance interposed therebetween, and a second measure precision evaluating pattern which has a plurality of pairs of pattern elements overlapped each other in a predetermined measure and arranged opposite to each other to form a constricted portion. The distance or the measure of overlapped area between paired pattern elements is varied with every pair of pattern elements. This mask pattern is transcribed onto the substrate and a pair of pattern elements contacting each other without overlapping is found from the transcribed pattern. Dimensional change is found from the distance or the measure of overlapped area between the pair of photomask pattern elements corresponding to that pair of pattern elements which has been found from the transcribed pattern.