The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1983
Filed:
Aug. 06, 1981
Norio Endo, Yokohama, JP;
Hisakazu Iizuka, Yokohama, JP;
Abstract
The invention provides a method for fabricating a semiconductor device comprising the steps of: forming an insulating layer on a semiconductor substrate; selectively forming an oxidation preventive film on the surface of said insulating layer; depositing polycrystalline silicon on the entire surface of said substrate including said oxidation preventive film; selectively etching said polycrystalline silicon so as to leave said polycrystalline silicon only around the sides of said oxidation preventive film by an etching method having a directivity perpendicular to the surface of said substrate; ion-implanting an impurity for preventing inversion in said substrate using as a mask said oxidation preventive film and said polycrystalline silicon remaining therearound; and forming a field insulator film including an oxide of said polycrystalline silicon by oxidizing the surface of said substrate. A higher integration and a higher reliability of elements may be attained according to the method of the invention.