Hisakazu Iizuka

Title: Hisakazu Iizuka: Innovator in Semiconductor Memory Technology

Introduction

Hisakazu Iizuka is a prominent inventor known for his contributions to semiconductor memory technology. He is based in Yokohama, Japan, and holds a total of 9 patents. His work has significantly impacted the field of memory devices, particularly in the development of nonvolatile memory systems.

Latest Patents

One of Iizuka's latest patents is titled "Memory having ferroelectric capacitors polarized in nonvolatile mode." This invention describes a semiconductor memory device that includes a ferroelectric capacitor and a voltage output circuit. The circuit outputs a first voltage for reversely polarizing the ferroelectric capacitor and a second voltage that maintains the polarization regardless of the data stored. Additionally, the patent outlines a method for determining data based on the electric charge in the ferroelectric capacitors while the memory is set in volatile mode and from the polarization direction in nonvolatile mode.

Another significant patent is the "Method for manufacturing E²PROM." This invention involves forming an erase gate for erasing data from a floating gate in a semiconductor memory device. It emphasizes achieving electrical insulation between the erase gate and the control gate by making the insulating film thicker between these components than between the floating gate and the erase gate.

Career Highlights

Iizuka has worked with notable companies in the technology sector, including Tokyo Shibaura Denki and Toshiba Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Iizuka has collaborated with esteemed colleagues such as Fujio Masuoka and Motomasa Imai. These partnerships have contributed to the advancement of memory technology and have fostered a collaborative environment for innovation.

Conclusion

Hisakazu Iizuka's contributions to semiconductor memory technology have established him as a key figure in the field. His innovative patents and collaborations reflect his commitment to advancing memory device technology.