The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1978
Filed:
Dec. 27, 1976
Fujio Masuoka, Yokohama, JP;
Hisakazu Iizuka, Yokohama, JP;
Tokyo Shibaura Electric Co., Ltd., Tokyo, JP;
Abstract
A memory is formed by a first insulating layer provided on a part of the surface of a semiconductor substrate of a first conductivity type, a first electrode provided on the first insulating layer and a surface region which serves as an electrode on the semiconductor substrate facing the first electrode. A semiconductor region of a second conductivity type is formed in the semiconductor substrate spaced from the surface electrode of the substrate, for providing a connection thereof to a digit line. A second electrode is provided between the second conductivity type semiconductor region and the surface region which serves as an electrode of the semiconductor substrate via a second insulating layer. The second electrode extends over a third insulating layer provided on the first electrode, and the extended portion of the second electrode is provided with an electrode secured thereto for providing a connection of the second electrode to an address selection line.