The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 1984
Filed:
Jun. 30, 1982
Hisakazu Iizuka, Yokohama, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
Disclosed is a semiconductor memory element having a semiconductor substrate of P conductivity type, source and drain regions which are of N conductivity type and formed in the substrate, a first gate insulation layer formed on the major surface of the substrate, corresponding to a channel region located between the source and drain, a floating gate electrode formed on the first gate insulation layer so as to partially overlap the channel region, a second gate insulation layer formed on the floating gate electrode, a control gate electrode formed on the second gate insulation layer so as to partially overlap the floating gate electrode, and an addressing gate electrode formed on the control gate electrode, extending to a portion of the channel region not covered by the floating gate electrode and the control gate electrode.