The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1981
Filed:
Sep. 20, 1979
Applicant:
Inventors:
Tadashi Shibata, Menlo Park, CA (US);
Hisakazu Iizuka, Yokohama, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156628 ; 29571 ; 148187 ; 156643 ; 156657 ;
Abstract
Disclosed is a method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electrode and/or wire which includes a process for applying a laser light or electron beam to the polycrystalline silicon layer prior to a patterning process, thereby preventing over-etching and diffusion of impurity into the surface of a semiconductor substrate which are liable to be caused in the manufacturing processes, facilitating patterning in a desired manner, and reducing the resistance of the polycrystalline silicon layer to improve the operating speed of the device.