The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1982
Filed:
May. 07, 1980
Soichi Iwamura, Fuchu, JP;
Yasuaki Nishida, Tokyo, JP;
Toshimi Yamato, Musashino, JP;
Norikazu Sawazaki, Yokohama, JP;
Yoshio Nishi, Yokohama, JP;
Masaharu Watanabe, Yokosuka, JP;
Norio Endo, Yokohama, JP;
Nippon Hoso Kyokai, Kawasaki, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
An information recording medium comprises a silicon substrate, a silicon dioxide film formed on one principal surface of the semiconductor substrate and a silicon nitride film formed on the silicon dioxide film. A recording electrode stylus is moved relative to and along the surface of the silicon nitride film while applying a recording signal voltage between the stylus and substrate, thus causing charges corresponding to the recording signal voltage to be passed through the silicon dioxide film by the tunnel effect and stored in the silicon nitride film.