The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1984
Filed:
Dec. 15, 1981
Applicant:
Inventors:
Shozo Saito, Yokohama, JP;
Yukimasa Uchida, Yokohama, JP;
Kazuhiko Hashimoto, Tokyo, JP;
Norio Endo, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; H01L / ;
U.S. Cl.
CPC ...
365184 ; 357 23 ;
Abstract
A nonvolatile semiconductor memory device having a gate insulating film with a memory function. An impurity layer having the same conductivity type as that of the substrate region is formed in that substrate region, underlying the gate insulating film having a memory function, in which a channel is formed. The impurity layer has an impurity profile in which a peak of an impurity concentration is in the region distanced by 500 .ANG. or less from the surface of the substrate region and the impurity concentration is 1.times.10.sup.18 cm.sup.-3 or less in the region at the depth of 500 .ANG. or more.