The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1977
Filed:
Jul. 03, 1974
Applicant:
Inventors:
Norio Endo, Yokohama, JA;
Yoshio Nishi, Yokohama, JA;
Assignee:
Tokyo Shibaura Electric Co., Ltd., Kawasaki, JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G11B / ; G11B / ;
U.S. Cl.
CPC ...
357 23 ; 357 52 ; 357 54 ; 3401 / ;
Abstract
A non-volatile semiconductor memory device includes source and drain regions formed on a semiconductor substrate to define p-n junctions with the substrate and a gate layer having a silicon oxide film and a silicon nitride film. A high impurity concentration diffusion layers are formed around at least one of the source and drain regions, which have the same conductivity type as the substrate, an impurity concentration of above 10.sup.17 atoms cm.sup.-.sup.3 and a width of below 1 .mu.m.